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參數(shù)資料
| 型號： | ST1230C12K0 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 3200 A, 1200 V, SCR |
| 封裝： | KPUK-2 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 87K |
| 代理商： | ST1230C12K0 |
ST1230C..K Series
3
www.irf.com
Bulletin I25194 rev. B 01/00
di/dt
Max. non-repetitive rate of rise
Gate drive 20V, 20
, t
r ≤
1s
of turned-on current
T
J = TJ max, anode voltage ≤ 80%
V
DRM
Gate current 1A, di
g
/dt = 1A/s
V
d
= 0.67% V
DRM, TJ = 25°C
I
TM
= 550A, T
J
= T
J
max, di/dt = 40A/s, V
R
= 50V
dv/dt = 20V/s, Gate 0V 100
, t
p
= 500s
Parameter
ST1230C..K
Units Conditions
Switching
1000
A/s
t
d
Typical delay time
1.9
t
q
Typical turn-off time
200
s
dv/dt
Maximum critical rate of rise of
off-state voltage
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Blocking
500
V/s
T
J = TJ max. linear to 80% rated V DRM
Parameter
ST1230C..K
Units Conditions
100
mA
T
J = TJ max, rated VDRM /V RRM applied
P
GM
Maximum peak gate power
16
T
J
= T
J
max, t
p ≤
5ms
P
G(AV)
Maximum average gate power
3
T
J = TJ max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current
3.0
A
T
J
= T
J
max, t
p ≤
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
T
J = - 40°C
mA
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
VT
J
= 25°C
T
J = 125°C
I
GD
DC gate current not to trigger
10
mA
Parameter
ST1230C..K
Units Conditions
20
5.0
Triggering
TYP.
MAX.
200
-
100
200
50
-
1.4
-
1.1
3.0
0.9
-
V
GD
DC gate voltage not to trigger
0.25
V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM anode-to-cathode applied
T
J = TJ max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
V
GT
DC gate voltage required
to trigger
I
GT
DC gate current required
to trigger
W
VT
J = TJ max, t
p ≤
5ms
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ST1230C12K0L | 功能描述:SCR模塊 1745 Amp 1200 Volt 3200 Amp IT(RMS) RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
| ST1230C12K0LP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1745 A |
| ST1230C12K0P | 功能描述:SCR模塊 1745 Amp 1200 Volt 3200 Amp IT(RMS) RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
| ST1230C12K1 | 功能描述:SCR模塊 1745 Amp 1200 Volt 3200 Amp IT(RMS) RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
| ST1230C12K1LP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1745 A |
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