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參數(shù)資料
| 型號： | ST1280C04K1 |
| 廠商： | International Rectifier |
| 英文描述： | PHASE CONTROL THYRISTORS |
| 中文描述： | 相位控制晶閘管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 87K |
| 代理商： | ST1280C04K1 |
ST1280C..K Series
2
www.irf.com
Bulletin I25195 rev. B 02/00
Voltage
Code
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage
V
V
RSM
, maximum non-
repetitive peak voltage
V
I
DRM
/I
RRM
max.
@ T
J
= T
J
max
mA
Type number
04
400
500
06
600
700
ELECTRICAL SPECIFICATIONS
Voltage Ratings
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20
, t
r
≤
1μs
T
J
= T
J
max, anode voltage
≤
80%
V
DRM
Gate current 1A, di
g
/dt = 1A/μs
V
d
= 0.67% V
DRM
,
T
J
= 25
°
C
I
TM
= 550A, T
J
= T
J
max, di/dt
= 40A/μs, V
R
= 50V
dv/dt
= 20V/μs, Gate 0V 100
,
t
p
= 500μs
Parameter
ST1280C..K
Units Conditions
Switching
1000
A/μs
t
d
Typical delay time
1.9
t
q
Typical turn-off time
200
μs
ST1280C..K
100
I
T(AV)
Max. average on-state current
2310 (885)
A
180
°
conduction, half sine wave
@ Heatsink temperature
55 (85)
°
C
double side (single side) cooled
I
T(RMS)
I
TSM
Max. RMS on-state current
4150
@ 25
°
C heatsink temperature double side cooled
Max. peak, one-cycle
42500
t = 10ms
No voltage
non-repetitive surge current
44500
A
t = 8.3ms
reapplied
35700
t = 10ms
100% V
RRM
reapplied
37400
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
9027
t = 10ms
No voltage
Initial T
J
= T
J
max.
8241
t = 8.3ms
reapplied
6383
t = 10ms
100% V
RRM
5828
t = 8.3ms
reapplied
I
2
√
t
Maximum I
2
√
t for fusing
90270
KA
2
√
s
t = 0.1 to 10ms, no voltage reapplied
V
T(TO)
1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
I
H
I
L
Max. on-state voltage
1.44
V
I
pk
= 8000A, T
J
= T
J
max, t
p
= 10ms sine pulse
Maximum holding current
600
Typical latching current
1000
0.83
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
0.077
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
0.068
(I >
π
x I
T(AV)
),T
J
= T
J
max.
Parameter
ST1280C..K
Units Conditions
0.90
(I >
π
x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2
s
V
m
mA
T
J
= 25
°
C, anode supply 12V resistive load
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PDF描述 |
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| ST1280C04K1L | PHASE CONTROL THYRISTORS |
| ST1280C04K2 | PHASE CONTROL THYRISTORS |
| ST1280C04K2L | PHASE CONTROL THYRISTORS |
| ST1280C04K3 | PHASE CONTROL THYRISTORS |
| ST1280C04K3L | PHASE CONTROL THYRISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ST1280C04K1L | 制造商:IRF 制造商全稱:International Rectifier 功能描述:PHASE CONTROL THYRISTORS |
| ST1280C04K2 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 2310 A |
| ST1280C04K2L | 制造商:IRF 制造商全稱:International Rectifier 功能描述:PHASE CONTROL THYRISTORS |
| ST1280C04K3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 2310 A |
| ST1280C04K3L | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 2310 A |
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