參數(shù)資料
型號(hào): ST173C12CFK0L
廠商: VISHAY SEMICONDUCTORS
元件分類: 晶閘管
英文描述: 610 A, 1200 V, SCR, TO-200AB
封裝: METAL CASE WITH CERAMIC INSULATOR, APUK-3
文件頁數(shù): 2/9頁
文件大?。?/td> 175K
代理商: ST173C12CFK0L
ST173C..C Series
2
Bulletin I25180 rev. B 04/00
www.irf.com
Voltage
V
DRM
/V
RRM
, maximum
V
RSM
, maximum
I
DRM
/I
RRM
max.
Type number
Code
repetitive peak voltage
non-repetitive peak voltage
@ T
J = TJ max.
VV
mA
10
1000
1100
12
1200
1300
I
T(AV)
Max. average on-state current
330 (120)
A
180° conduction, half sine wave
@ Heatsink temperature
55 (85)
°C
double side (single side) cooled
I
T(RMS)
Max. RMS on-state current
610
DC @ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one half cycle,
4680
t = 10ms
No voltage
non-repetitive surge current
4900
A
t = 8.3ms
reapplied
3940
t = 10ms
100% V
RRM
4120
t = 8.3ms
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
110
t = 10ms
No voltage
Initial T
J
= T
J
max
100
t = 8.3ms
reapplied
77
t = 10ms
100% V
RRM
71
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
1100
KA2
√s
t = 0.1 to 10ms, no voltage reapplied
Parameter
ST173C..C
Units
Conditions
On-state Conduction
KA2s
ELECTRICAL SPECIFICATIONS
Voltage Ratings
ST173C..C
40
Frequency
Units
50Hz
760
660
1200
1030
5570
4920
400Hz
730
590
1260
1080
2800
2460
1000Hz
600
490
1200
1030
1620
1390
A
2500Hz
350
270
850
720
800
680
Recovery voltage Vr
50
Voltage before turn-on Vd
V
DRM
V
DRM
V
DRM
Rise of on-state current di/dt
50
-
A/
s
Heatsink temperature
40
55
40
55
40
55
°C
Equivalent values for RC circuit
47
/ 0.22F
47
/ 0.22F
47
/ 0.22F
I
TM
180oel
100
s
I
TM
I
TM
Current Carrying Capability
V
相關(guān)PDF資料
PDF描述
ST173C12CFK0 610 A, 1200 V, SCR, TO-200AB
ST173C12CFK1 610 A, 1200 V, SCR, TO-200AB
ST173C12CFP0 610 A, 1200 V, SCR, TO-200AB
ST173C12CFP1 610 A, 1200 V, SCR, TO-200AB
ST173S10PFK0 275 A, 1000 V, SCR, TO-209AB
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