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參數(shù)資料
| 型號： | ST173S12PEJ2L |
| 元件分類： | 晶閘管 |
| 英文描述： | 275 A, 1200 V, SCR, TO-209AB |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 132K |
| 代理商： | ST173S12PEJ2L |
ST173S Series
3
Bulletin I25181 rev. C 12/96
www.irf.com
V
TM
Max. peak on-state voltage
2.07
I
TM= 600A, TJ = TJ max, t
p
= 10ms sine wave pulse
V
T(TO)1 Low level value of threshold
voltage
V
T(TO)2 High level value of threshold
voltage
r
t1
Low level value of forward
slope resistance
r
t2
High level value of forward
slope resistance
I
H
Maximum holding current
600
T
J = 25°C, I T > 30A
I
L
Typical latching current
1000
T
J = 25°C, VA= 12V, Ra = 6 , I G= 1A
Parameter
ST173S
Units
Conditions
On-state Conduction
1.55
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
1.58
(I >
π x I
T(AV)
), T
J
= T
J
max.
V
0.87
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
0.82
(I >
π x I
T(AV)
), T
J
= T
J
max.
m
mA
di/dt
Max. non-repetitive rate of rise
T
J = TJ max, VDRM = rated VDRM
of turned-on current
I
TM = 2 x di/dt
T
J = 25°C, VDM = rated VDRM, ITM = 50A DC, t
p
= 1s
Resistive load, Gate pulse: 10V, 5
source
T
J = TJ max, ITM = 300A, commutating di/dt = 20A/s
V
R = 50V, t
p
= 500s, dv/dt: see table in device code
Switching
Parameter
ST173S
Units
Conditions
1000
A/s
t
d
Typical delay time
1.1
Min
Max
dv/dt
Maximum critical rate of rise of
T
J
= T
J
max., linear to 80% V
DRM
, higher value
off-state voltage
available on request
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Parameter
ST173S
Units
Conditions
Blocking
500
V/
s
40
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
60
P
G(AV)
Maximum average gate power
10
I
GM
Max. peak positive gate current
10
A
T
J = TJ max, t
p ≤
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
I
GD
Max. DC gate current not to trigger
20
mA
V
GD
Max. DC gate voltage not to trigger
0.25
V
Triggering
Parameter
ST173S
Units
Conditions
20
5
VT
J = TJ max, t
p ≤
5ms
200
mA
3V
T
J = 25°C, V A = 12V, Ra = 6
T
J
= T
J
max., rated V
DRM
applied
t
q
Max. turn-off time
15
25
s
WT
J = TJ max, f = 50Hz, d% = 50
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| ST173S12PFK0 | 功能描述:SCR INVERTER 1200V 175A TO-93 RoHS:是 類別:分離式半導體產(chǎn)品 >> SCR - 單個 系列:- 其它有關(guān)文件:X00619 View All Specifications 產(chǎn)品目錄繪圖:SCR TO-92 Package 標準包裝:1 系列:- SCR 型:靈敏柵極 電壓 - 斷路:600V 電壓 - 柵極觸發(fā)器 (Vgt)（最大）:800mV 電壓 - 導通狀態(tài) (Vtm)（最大）:1.35V 電流 - 導通狀態(tài) (It (AV))（最大）:500mA 電流 - 導通狀態(tài) (It (RMS))（最大）:800mA 電流 - 柵極觸發(fā)電流 (Igt)（最大）:200µA 電流 - 維持(Ih):5mA 電流 - 斷開狀態(tài)（最大）:1µA 電流 - 非重復電涌，50、60Hz (Itsm):9A，10A 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:TO-226-3、TO-92-3（TO-226AA）成形引線 供應(yīng)商設(shè)備封裝:TO-92-3 包裝:剪切帶 (CT) 產(chǎn)品目錄頁面:1554 (CN2011-ZH PDF) 其它名稱:497-9067-1 |
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