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參數(shù)資料
| 型號： | ST180C18C0 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 660 A, 1800 V, SCR, TO-200AB |
| 封裝： | APUK-2 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 87K |
| 代理商： | ST180C18C0 |
ST180C..C Series
3
Bulletin I25164 rev. C 02/00
www.irf.com
di/dt
Max. non-repetitive rate of rise
Gate drive 20V, 20
, t
r ≤
1s
of turned-on current
T
J = T J max, anode voltage ≤
80% V
DRM
Gate current 1A, di
g
/dt = 1A/s
V
d
= 0.67% V
DRM, TJ = 25°C
I
TM = 300A, TJ = T J max, di/dt = 20A/s , VR = 50V
dv/dt = 20V/s, Gate 0V 100
, t
p
= 500s
Parameter
ST180C..C
Units Conditions
t
d
Typical delay time
1.0
Switching
t
q
Typical turn-off time
100
s
1000
A/s
dv/dt
Maximum critical rate of rise of
off-state voltage
I
DRM
Max. peak reverse and off-state
I
RRM
leakage current
Blocking
500
V/
sT
J = TJ max linear to 80% rated VDRM
Parameter
ST180C..C
Units Conditions
30
mA
T
J = TJ max, rated V DRM/V RRM applied
P
GM
Maximum peak gate power
10
T
J
= T
J
max, t
p ≤
5ms
P
G(AV)
Maximum average gate power
2.0
T
J = TJ max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current
3.0
A
T
J
= T
J
max, t
p ≤
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
T
J = - 40°C
mA
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
VT
J
= 25°C
T
J = 125°C
I
GD
DC gate current not to trigger
10
mA
Parameter
ST180C..C
Units Conditions
20
5.0
Triggering
TYP.
MAX.
180
-
90
150
40
-
2.9
-
1.8
3.0
1.2
-
V
GD
DC gate voltage not to trigger
0.25
V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
T
J = TJ max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
V
GT
DC gate voltage required
to trigger
I
GT
DC gate current required
to trigger
W
VT
J = TJ max, t
p ≤
5ms
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