參數(shù)資料
型號(hào)： ST180S12P0
廠商： VISHAY SEMICONDUCTORS
元件分類(lèi)： 晶閘管
英文描述： 314 A, 1200 V, SCR, TO-209AB
封裝： HERMETIC SEALED, METAL, TO-93, 3 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 91K
代理商： ST180S12P0
ST180S Series
2
Bulletin I25165 rev. C 03/03
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage
V
400
800
1200
1600
2000
V
RSM
, maximum non-
repetitive peak voltage
V
500
900
1300
1700
2100
I
DRM
/I
RRM
max.
@ T
J
= T
J
max
mA
Type number
04
08
12
16
20
ST180S
30
I
T(AV)
Max. average on-state current
@ Case temperature
200
85
A
°C
180° conduction, half sine wave
I
T(RMS)
Max. RMS on-state current
I
TSM
non-repetitive surge current
314
A
DC @ 76°C case temperature
Max. peak, one-cycle
5000
t = 10ms
No voltage
5230
t = 8.3ms
reapplied
4200
t = 10ms
100% V
RRM
reapplied
4400
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
125
t = 10ms
No voltage
Initial T
J
= T
J
max.
114
t = 8.3ms
reapplied
88
t = 10ms
100% V
RRM
reapplied
81
t = 8.3ms
I
2
√
t
Maximum I
2
√
t for fusing
1250
KA
2
√
s
t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
I
H
I
L
Max. on-state voltage
1.75
V
I
pk
= 570A, T
J
= 125°C, t
p
= 10ms sine pulse
Maximum holding current
600
Max. (typical) latching current
1000 (300)
1.08
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
1.18
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
1.14
(I >
π
x I
T(AV)
),T
J
= T
J
max.
Parameter
ST180S
Units Conditions
1.14
(I >
π
x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2
s
V
m
mA
T
J
= T
J
max, anode supply 12V resistive load
A
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20
, t
r
≤
1μs
T
J
= T
J
max, anode voltage
≤
80% V
DRM
Gate current 1A, di
g
/dt = 1A/μs
V
d
= 0.67% V
DRM
,
T
J
= 25°C
I
TM
= 300A, T
J
= T
J
max, di/dt
= 20A/μs, V
R
= 50V
dv/dt
= 20V/μs, Gate 0V 100
,
t
p
= 500μs
Parameter
ST180S
Units Conditions
t
d
Typical delay time
1.0
Switching
t
q
Typical turn-off time
100
μs
1000
A/μs
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