參數(shù)資料
型號: ST180S12P1
廠商: VISHAY SEMICONDUCTORS
元件分類: 晶閘管
英文描述: 314 A, 1200 V, SCR, TO-209AB
封裝: HERMETIC SEALED, METAL, TO-93, 3 PIN
文件頁數(shù): 8/8頁
文件大?。?/td> 91K
代理商: ST180S12P1
ST180S Series
8
Bulletin I25165 rev. C 03/03
www.irf.com
Fig. 9 - Gate Characteristics
0.1
0.001
1
10
100
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
T
T
T
(1)
(2)
(3)
Instantaneous Gate Current (A)
I
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 μs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 μs
Frequency Lmited by PG(AV)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Device: ST180SSeries
(4)
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
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