參數(shù)資料
型號(hào)： ST1900C52R1L
元件分類： 晶閘管
英文描述： 3500 A, 5200 V, SCR
封裝： RPUK-2
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 70K
代理商： ST1900C52R1L
ST1900C..R Series
2
Bulletin I25197 rev. B 02/00
www.irf.com
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
C
= 125°C
VV
mA
45
4500
4600
46
4600
4700
48
4800
4900
50
5000
5100
52
5200
5300
ELECTRICAL SPECIFICATIONS
Voltage Ratings
ST1900C..R
250
I
T(AV)
Max. average on-state current
1625 (1030)
A
@ Case temperature
80
°C
I
T(AV)
Max. average on-state current
1940 (800)
A
@ Heatsink temperature
55 (85)
°C
I
T(RMS)
Max. RMS on-state current
3500
A
DC @ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle
No voltage
non-repetitive surge current
reapplied
50% V
RRM
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
No voltage
Initial T
C
= 125°C
reapplied
50% V
RRM
reapplied
V
T(TO)
Max. value of threshold voltage
1.4
V
T
J = TJ max.
r
t
Max. value of on-state slope
resistance
V
TM
Max. on-state voltage
2.1
V
I
pk
= 2900A, T
C
= 25°C
I
L
Typical latching current
300
mA
T
J = 25° C, VD = 5V
Parameter
ST1900C..R
Units
Conditions
On-state Conduction
A
KA
2s
0.31
T
J
= T
J
max.
m
180° conduction, half sine wave
double side (single side [anode side]) cooled
Parameter
ST1900C..R
Units Conditions
Switching
di/dt
Max. repetitive 50Hz (no repetitive)
From 67% V
DRM
to 1000A gate drive 20V, 10
, t
r =
0.5s
rate of rise of turned-on current
to 1A, T
J
= T
J
max.
Gate drive 30V, 15
, V
d
= 67% V
DRM
, T
J
= 25°C
Rise time 0.5s
I
T
= 1000A, t
p
= 1ms, T
J
= T
J
max, V
RM
= 50V,
dI
RR/dt = 20A/s, VDR = 67% VDRM, dVDR/dt = 8V/s linear
150 (300)
A/s
s
t
q
Typical turn-off time
500
t
d
Maximum delay time
2.5
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
27500
29000
22000
23500
3780
3490
2420
2290
相關(guān)PDF資料
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