ST2100C..R Series
2
Bulletin I25198 rev. B 02/00
www.irf.com
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
C
= 125°C
VV
mA
30
3000
3100
32
3200
3300
34
3400
3500
36
3600
3700
38
3800
3900
40
4000
4100
42
4200
4300
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
T(AV)
Max. average on-state current
1770 (1150)
A
@ Case temperature
80
°C
I
T(AV)
Max. average on-state current
2090 (940)
A
@ Heatsink temperature
55 (85)
°C
I
T(RMS)
Max. RMS on-state current
3850
A
DC @ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle
No voltage
non-repetitive surge current
reapplied
50% V
RRM
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
No voltage
Initial T
C = 125°C
reapplied
50% V
RRM
reapplied
V
T(TO)
Max. value of threshold voltage
1.03
V
T
J
= T
J
max.
r
t
Max. value of on-state slope
resistance
V
TM
Max. on-state voltage
1.875
V
I
pk
= 2900A, T
C
= 25°C
I
L
Typical latching current
300
mA
T
J = 25° C, VD = 5V
Parameter
ST2100C..R
Units
Conditions
On-state Conduction
A
KA
2s
0.32
T
J
= T
J
max.
m
180° conduction, half sine wave
double side (single side [anode side]) cooled
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
36250
38000
29000
30350
6570
5990
4205
3820
Parameter
ST2100C..R
Units Conditions
150 (300)
A/s
s
t
q
Typical turn-off time
500
di/dt
Max. repetitive 50Hz (no repetitive)
From 67% V
DRM to 1000A gate drive 20V, 10, t
r =
0.5s
rate of rise of turned-on current
T
J = TJ max.
Gate drive 30V, 15
, V
d
= 67% V
DRM, TJ = 25°C
Rise time 0.5s
I
T
= 1000A, t
p
= 1ms, T
J
= T
J
max, V
RM
= 50V,
dI
RR/dt = 2A/s, VDR = 67% VDRM, dVDR/dt = 8V/s linear
Switching
t
d
Maximum delay time
2.5
ST2100C..R
250