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參數(shù)資料
| 型號(hào)： | ST223C08CFN0 |
| 英文描述： | Cyclone II FPGA 5K FBGA-256 |
| 中文描述： | 800V的745A逆變晶閘管采用TO - 200AB（甲，北辰）封裝 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 171K |
| 代理商： | ST223C08CFN0 |
ST223C..C Series
2
www.irf.com
Bulletin I25174 rev. B 04/00
Voltage
Code
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
RSM
, maximum
non-repetitive peak voltage
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
Type number
V
V
04
400
500
08
800
900
ELECTRICAL SPECIFICATIONS
Voltage Ratings
ST223C..C
40
Frequency
Units
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
930
910
780
490
50
800
770
650
400
50
1430
1490
1430
1070
50
1220
1300
1260
920
50
5870
3120
1880
1000
50
5240
2740
1640
860
50
A
V
DRM
V
DRM
V
DRM
50
50
-
-
-
-
A/
μ
s
°
C
Heatsink temperature
Equivalent values for RC circuit
40
47
/ 0.22μF
55
40
47
/ 0.22μF
55
40
47
/ 0.22μF
55
I
TM
180
o
el
180
o
el
100
μ
s
I
TM
I
TM
Current Carrying Capability
V
I
T(AV)
Max. average on-state current
@ Heatsink temperature
390 (150)
55 (85)
A
°
C
180
°
conduction, half sine wave
double side (single side) cooled
I
T(RMS)
I
TSM
Max. RMS on-state current
745
DC @ 25
°
C heatsink temperature double side cooled
Max. peak, one half cycle,
5850
t = 10ms
No voltage
non-repetitive surge current
6130
A
t = 8.3ms
reapplied
4920
t = 10ms
100% V
RRM
reapplied
5150
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
171
t = 10ms
No voltage
Initial T
J
= T
J
max
156
t = 8.3ms
reapplied
121
t = 10ms
100% V
RRM
reapplied
110
t = 8.3ms
I
2
√
t
Maximum I
2
√
t for fusing
1710
KA
2
√
s
t = 0.1 to 10ms, no voltage reapplied
Parameter
ST223C..C
Units
Conditions
On-state Conduction
KA
2
s
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| ST223C08CHK0 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Inverter Grade Thyristors (Hockey PUK Version), 390 A |
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| ST223C08CHK1L | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Inverter Grade Thyristors (Hockey PUK Version), 390 A |
| ST223C08CHK2 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Inverter Grade Thyristors (Hockey PUK Version), 390 A |
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