參數(shù)資料
型號(hào): ST230C16C0
英文描述: IC: CONFIGURATION DEVICE 4MBIT, PACKAGE 8SOIC
中文描述: 1600V 410A型相位控制晶閘管采用TO - 200AA(甲,北辰)封裝
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 86K
代理商: ST230C16C0
ST230C..C Series
3
Bulletin I25162 rev. C 01/00
www.irf.com
dv/dt
Maximum critical rate of rise of
off-state voltage
I
DRM
I
RRM
Max. peak reverse and off-state
leakage current
Blocking
500
V/
μ
s
T
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST230C..C
Units Conditions
30
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
P
G(AV)
Maximum average gate power
I
GM
Max. peak positive gate current
+V
GM
gate voltage
Maximum peak gate power
10.0
T
J
= T
J
max, t
p
5ms
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
5ms
2.0
3.0
A
Maximum peak positive
-V
GM
Maximum peak negative
gate voltage
T
J
= - 40
°
C
T
J
= 25
°
C
mA
T
J
= 125
°
C
T
J
= - 40
°
C
V
T
J
= 25
°
C
T
J
= 125
°
C
I
GD
DC gate current not to trigger
10
mA
Parameter
ST230C..C
Units Conditions
20
5.0
Triggering
TYP.
MAX.
180
-
90
150
40
-
2.9
-
1.8
3.0
1.2
-
V
GD
DC gate voltage not to trigger
0.25
V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
T
J
= T
J
max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
V
GT
DC gate voltage required
to trigger
I
GT
DC gate current required
to trigger
W
V
T
J
= T
J
max, t
p
5ms
T
J
T
stg
R
thJ-hs
Max. thermal resistance,
junction to heatsink
Max. operating temperature range
-40 to 125
Max. storage temperature range
-40 to 150
0.17
DC operation single side cooled
0.08
DC operation double side cooled
R
thC-hs
Max. thermal resistance,
case to heatsink
0.033
DC operation single side cooled
0.017
DC operation double side cooled
F
Mounting force, ± 10%
4900
N
(500)
(Kg)
wt
Approximate weight
50
g
Parameter
ST230C..C
Units
Conditions
K/W
Thermal and Mechanical Specification
°
C
Case style
TO - 200AB (A-PUK)
See Outline Table
K/W
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