參數(shù)資料
型號(hào): ST780C06L0
英文描述: 600V 1350A Phase Control SCR in a TO-200AC (B-Puk) package
中文描述: 600V的1350A相控制晶閘管采用TO - 200AC(乙,北辰)封裝
文件頁(yè)數(shù): 3/7頁(yè)
文件大小: 96K
代理商: ST780C06L0
ST780C..L Series
www.irf.com
Bulletin I25192 rev. C 04/00
3
dv/dt
Maximum critical rate of rise of
off-state voltage
I
DRM
I
RRM
Max. peak reverse and off-state
leakage current
Blocking
500
V/
μ
s
T
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST780C..L
Units Conditions
80
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
P
G(AV)
Maximum average gate power
I
GM
+V
GM
Maximum peak positive
gate voltage
Maximum peak gate power
10.0
T
J
= T
J
max, t
p
5ms
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
5ms
2.0
Max. peak positive gate current
3.0
A
-V
GM
Maximum peak negative
gate voltage
T
J
= - 40
°
C
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= - 40
°
C
T
J
= 25
°
C
T
J
= 125
°
C
mA
V
I
GD
DC gate current not to trigger
10
mA
Parameter
ST780C..L
Units Conditions
20
5.0
Triggering
TYP.
MAX.
200
-
100
200
50
-
2.5
-
1.8
3.0
1.1
-
V
GD
DC gate voltage not to trigger
0.25
V
T
J
= T
J
max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
V
GT
DC gate voltage required
to trigger
I
GT
DC gate current required
to trigger
W
V
T
J
= T
J
max, t
p
5ms
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
T
J
T
stg
R
thJ-hs
Max. thermal resistance,
junction to heatsink
Max. operating temperature range
-40 to 125
Max. storage temperature range
-40 to 150
0.073
DC operation single side cooled
0.031
DC operation double side cooled
R
thC-hs
Max. thermal resistance,
case to heatsink
0.011
DC operation single side cooled
0.006
DC operation double side cooled
F
Mounting force, ± 10%
14700
N
(1500)
(Kg)
wt
Approximate weight
255
g
Parameter
ST780C..L
Units
Conditions
K/W
°
C
Case style
TO - 200AC (B-PUK)
See Outline Table
K/W
Thermal and Mechanical Specification
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