- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄31377 > STB15K8.9 (SOLID STATE DEVICES INC) 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE PDF資料下載
參數(shù)資料
| 型號： | STB15K8.9 |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 47K |
| 代理商： | STB15K8.9 |
SOLID STATE DEVICES, INC.
Electrical Characteristics
Part
Number
STA15K7.9
thru
STA15K100
STA15K7.9
STA15K8.9
STA15K9.8
STA15K10.7
STA15K11.0
STA15K12.7
STA15K13.5
STA15K15.0
STA15K16.7
STA15K18.0
STA15K20.2
STA15K22.6
STA15K24.5
STA15K27.9
STA15K30.5
STA15K34
STA15K36
STA15K39
STA15K45
STA15K49
STA15K51
STA15K57
STA15K62
STA15K68
STA15K75
STA15K82
STA15K91
STA15K100
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
A
1.75
1.50
1.25
1.00
0.75
0.65
0.50
0.40
0.30
0.25
0.20
0.15
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
11.7
12.5
13.8
15.0
16.2
17.3
19.0
22.0
23.5
26.5
29.0
31.9
34.7
38.5
42.9
46.9
50.0
55.6
60.0
65.2
71.4
78.9
88.2
93.7
107.1
115.4
125.0
136.4
.03
.05
.06
.07
.08
.09
16.500
13.200
00.440
00.220
00.165
00.110
00.044
00.022
1280
1200
1090
1000
930
870
790
680
640
570
520
470
430
390
350
320
300
270
250
230
210
190
170
160
140
130
120
110
Notes:
1 .
All voltages are measured with automated test set using 35 msec test time. Longer or shorter test times will have a corresponding effect on the measured
value due to heating effects.
2.
Ratings based on 25° C case temperature.
3.
Pulse width (tp) is delined as the time from rated peak pulse current IPP to the point where peak pulse current decayed to 50% of rated IPP.
Volts
% / °C
7.9
8.9
9.8
10.7
11.0
12.7
13.5
15.0
16.7
18.0
20.2
22.6
24.5
27.9
30.5
34.0
36.0
39.0
45.0
49.0
51.0
57.0
62.0
68.0
75.0
82.0
91.0
100.0
12.5
11.5
10.2
9.5
8.6
7.7
7.0
6.0
5.5
5.0
4.4
3.9
3.6
3.1
2.8
2.6
2.4
2.1
1.8
1.75
1.7
1.6
1.5
1.3
1.2
1.1
1.0
.09
For optional high reliability screening or higher zener voltages, consult SSDI MARKETING Department.
mA
Volts
A
Volts
For 5% Voltage
Tolerance specify
"B" in place of A
V
BR
@I
RBT
V
RWM
V
C
I
PP
I
RM
TC
I
R @ VRWM
Nominal
Voltage
Test
Current
Voltage
Reverse
Leakage
Current
Voltage
(max)
@ Current
tp=1ms
(note 4)
Maximum
Continuous
Current
(note 3)
Maximum
Temperature
Coefficient
Break Down (note 1)
Max Reverse Stand Off
Peak Pulse Clamping
A
PEAK
PULSE
POWER
(KW
)
PEAK PULSE POWER VS. PULSE WIDTH
PULSE WIDTH
CURRENT PULSE WAVEFORM
STEADY STATE POWER DERATING
%
PEAK
V
ALUE
STEADY
ST
A
TE
POWER
(%
of
25
c
rated
power)
CASE TEMPERATURE (
°C)
相關PDF資料 |
PDF描述 |
|---|---|
| STB15K82 | 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| STB15K36 | 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| STB15K22.6 | 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| STB15K75 | 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| STB15K27.9 | 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STB15N25 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STB15N65M5 | 功能描述:MOSFET N-Ch 650V 0.308 Ohm 11A Mdmesh V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB15N80K5 | 功能描述:MOSFET N-Ch 800V 0.3Ohm typ SuperMESH V 14A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB15NK50Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL500V-0.30ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| STB15NK50Z-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 500V - 0.30Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESH? Power MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。