參數(shù)資料
型號(hào)： STB20NE06LT4
元件分類： 熱敏電阻
英文描述： THERMISTOR, PTC 2.50 OHM .10A
中文描述： 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 20A條（?。﹟對(duì)263AB
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 84K
代理商： STB20NE06LT4
1/8
December 2000
STB20NE06L
N-CHANNEL 60V - 0.06
- 20A D
2
PAK
STripFET
POWER MOSFET
I
TYPICAL RDS(on) = 0.06
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
LOW GATE CHARGE 100 oC
I
LOW THRESHOLD DRIVE
I
ADD SUFFIX“T4” FORORDERINGINTAPE&
REEL
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique “Single Feature Size
”
strip-based
process.
The
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
resulting
transistor
APPLICATIONS
I
DC MOTOR CONTROL
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
TYPE
V
DSS
R
DS(on)
I
D
STB20NE06L
60 V
<0.07
20 A
D
2
PAK
TO-263
(suffix“T4”)
1
3
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25
°
C
I
D
Drain Current (continuos) at T
C
= 100
°
C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25
°
C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
)Pulse width limited by safe operating area.
(1)
I
SD
≤
20A, di/dt
≤
300A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
Parameter
Value
60
60
±
20
20
14
80
70
0.47
Unit
V
V
V
A
A
A
W
W/
°
C
V/ns
°
C
°
C
7
–60 to 175
175
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
PDF描述
STB20NE06T4 0.5A HOLD,1.0A TRIP,60V
STB20NE06 N - CHANNEL 60V - 0.06ohm - 20A D2PAK STripFET] POWER MOSFET
STB20NM60 N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET
STB20NM60-1 N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET
STB20NM60T4 N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB20NE06T4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-263AB
STB20NF06L 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 60V - 0.06ヘ - 20A - D2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET
STB20NF06LT4 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB20NK50Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247
STB20NK50Z_09 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 500 V, 0.23 Ω, 17 A SuperMESH? Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK
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