參數(shù)資料
型號: STB40NE03L20
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-263AB
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直| 40A條(?。﹟對263AB
文件頁數(shù): 2/9頁
文件大?。?/td> 158K
代理商: STB40NE03L20
STB40NF10L
2/9
THERMAL DATA
Rthj-case
ELECTRICAL CHARACTERISTICS
(TCASE = 25
°
C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
ON (1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
Thermal Resistance Junction-case Max
1
°
C/W
°
C/W
°
C
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
T
l
Maximum Lead Temperature For Soldering Purpose
300
Test Conditions
I
D
= 250
μ
A, V
GS
= 0
Min.
100
Typ.
Max.
Unit
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125
°
C
V
GS
=
±
15V
1
μ
A
μ
A
nA
10
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 20 A
V
GS
= 5V,I
D
= 20 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
1
1.7
2.5
V
Static Drain-source On
Resistance
0.028
0.033
0.030
0.036
Parameter
Test Conditions
V
DS
=15V
,
I
D
= 20 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
25
Max.
Unit
S
Forward Transconductance
Input Capacitance
2300
pF
Output Capacitance
290
pF
C
rss
Reverse Transfer
Capacitance
125
pF
相關PDF資料
PDF描述
STB40NE03L-20T4 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-263AB
STB40NF03LT4 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-263AB
STB40NF10 N - CHANNEL 100V - 0.030W - 40ohm TO-263 LOW GATE CHARGE STripFET POWER MOSFET
STB40NF10-1 N-CHANNEL 100V - 0.024ohm - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET
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