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參數(shù)資料
| 型號： | STB55NF03LT4 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 119K |
| 代理商： | STB55NF03LT4 |
1/10
August 2002
.
STP55NF06
STB55NF06-1 STP55NF06FP
N-CHANNEL 60V - 0.015
- 50A TO-220/TO-220FP/I
2
PAK
STripFET
II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.015
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique ”Single Feature Size
”
strip-based
process.
The
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
resulting
transistor
APPLICATIONS
I
HIGH CURRENT, HIGH SWITCHING SPEED
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
I
AUTOMOTIVE ANVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
TYPE
V
DSS
R
DS(on)
I
D
STP55NF06
STB55NF06-1
STB55NF06FP
60 V
60 V
60 V
<0.018
<0.018
<0.018
50 A
50 A
26 A
1
2
3
TO-220
I
2
PAK
TO-262
123
1
2
3
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
(
)
Pulse width limitedby safe operating area.
(1) I
SD
≤
50A, di/dt
≤
400A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 25A, V
DD
= 30V
Parameter
Value
Unit
STP55NF06
STB55NF06
STP55NF06FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25
°
C
Drain Current (continuous) at T
C
= 100
°
C
Drain Current (pulsed)
Total Dissipation at T
C
= 25
°
C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
60
60
±
20
V
V
V
A
A
A
W
50
35
200
110
0.73
26
18
104
30
0.2
W/
°
C
V/ns
mJ
dv/dt
(1)
E
AS(2)
T
stg
T
j
7
350
-55 to 175
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB55NF06 | N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/DPAK STripFET⑩ II POWER MOSFET |
| STB55NF06-1 | N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/DPAK STripFET⑩ II POWER MOSFET |
| STB5NA50-1 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-262VAR |
| STB5NA50T4 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-263AB |
| STB5NA80-1 | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4.7A I(D) | TO-262AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB55NF06 | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 60V 50A D2PAK |
| STB55NF06_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 60V - 0.015ヘ - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET |
| STB55NF06-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/DPAK STripFET⑩ II POWER MOSFET |
| STB55NF06FP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 26A I(D) | TO-220FP |
| STB55NF06L | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 60V 55A D2PAK |
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