參數(shù)資料
型號(hào): STB55NF06-1
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/DPAK STripFET⑩ II POWER MOSFET
中文描述: N溝道60V的- 0.015歐姆- 50A條TO-220/TO-220FP/I巴基斯坦/數(shù)巴基斯坦STripFET⑩二功率MOSFET
文件頁數(shù): 2/10頁
文件大?。?/td> 119K
代理商: STB55NF06-1
STB55NF06-1 STP55NF06 STP55NF06FP
2/10
THERMAL DATA
ELECTRICAL CHARACTERISTICS
(T
case
= 25
°
C unless otherwise specified)
OFF
ON
(*
)
DYNAMIC
I
2
PAK
TO-220
TO-220FP
Rthj-case
Thermal Resistance Junction-case
Max
1.36
5
°
C/W
Rthj-amb
T
l
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
62.5
300
°
C/W
°
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125
°
C
1
10
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
20 V
±
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250
μ
A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 27.5 A
0.015
0.018
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs(*)
Forward Transconductance
V
DS
= 15 V
I
D
= 27.5 A
18
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1530
300
105
pF
pF
pF
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