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參數(shù)資料
| 型號： | STB70NH03L |
| 英文描述： | N-CHANNEL 30V - 0.0075 OHM - 60A D2PAK STRIPFET III POWER MOSFET FOR DC-DC CONVERSION |
| 中文描述： | N溝道30V的- 0.0075歐姆-第60A條采用D2PAK STRIPFET三功率MOSFET的DC - DC轉(zhuǎn)換 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 155K |
| 代理商： | STB70NH03L |
1/9
April 2001
STB70NFS03L
N-CHANNEL 30V - 0.008
- 70A D2PAK
STripFET
MOSFET PLUS SCHOTTKY RECTIFIER
DESCRIPTION
This product associates a Power MOSFET of the
third genarationof STMicroelectronics unique “ Sin-
gle Feature Size” strip-based process and a low
drop Schottky diode. The transistor shows the best
trade-off between on-resistance and gate charge.
Used as low side in buck regulators, the product is
the solutionin terms of conductionlosses and space
saving.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25
°
C
I
D
Drain Current (continuos) at T
C
= 100
°
C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25
°
C
Derating Factor
(
G
) Pulse width limited by safe operating area
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
Repetitive Peak Reverse Voltage
I
F(RMS)
RMS Forward Current
I
F(AV)
Average Forward Current
MAIN PRODUCT CHARACTERISTICS
MOSFET
V
DSS
R
DS(on)
I
D
30 V
< 0.01
70 A
SCHOTTKY
I
F(AV)
V
RRM
V
F(MAX)
3 A
30 V
0.51 V
Parameter
Value
Unit
30
V
30
V
±
20
V
70
A
50
A
280
A
100
W
0.67
W/
°
C
°
C
°
C
T
stg
T
j
Storage Temperature
–65 to 175
Max. Operating Junction Temperature
175
Parameter
Value
Unit
20
V
20
A
TL = 125
°
C
δ
= 0.5
tp = 10 ms
Sinusoidal
3
A
I
FSM
Surge Non Repetitive Forward Current
75
A
dv/dt
Critical Rate Of Rise Of Reverse Voltage
10000
V/
μ
s
D2PAK
1
3
INTERNAL SCHEMATIC DIAGRAM
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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