參數(shù)資料
型號: STB80NF55L-08-1
英文描述: N-CHANNEL 55V - 0.0065 OHM - 80A TO-220/D2PAK/I2PAK STRIPFET II POWER MOSFET
中文描述: N溝道55V的- 0.0065歐姆- 80A條TO-220/D2PAK/I2PAK STRIPFET二功率MOSFET
文件頁數(shù): 3/9頁
文件大?。?/td> 339K
代理商: STB80NF55L-08-1
3/9
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
V
DD
= 27V, I
D
= 40A
R
G
= 4.7
V
GS
= 4.5V
(see test circuit, Figure 3)
V
DD
= 27.5 V, I
D
= 80A,
V
GS
= 4.5V
Min.
Typ.
Max.
Unit
35
ns
t
r
Rise Time
145
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
75
20
30
100
nC
nC
nC
Parameter
Test Conditions
V
DD
= 27V, I
D
= 40A,
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 3)
Min.
Typ.
85
65
Max.
Unit
ns
ns
Turn-off-Delay Time
Fall Time
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
80
A
Source-drain Current (pulsed)
320
A
Forward On Voltage
I
SD
= 80A, V
GS
= 0
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 80A, di/dt = 100A/μs,
V
DD
= 20V, T
j
= 150°C
(see test circuit, Figure 5)
85
280
6.5
ns
nC
A
相關(guān)PDF資料
PDF描述
STB80NF55-06-1 TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-262AA
STB80NF55-06T4 TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB
STB80NF55-07 TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB
STB80NF55-08T4 TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB
STB80NF55L06 TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB
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