- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄372326 > STB85NF55T4 TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB PDF資料下載
參數(shù)資料
| 型號(hào)： | STB85NF55T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 55V的五（巴西）直| 80A條（丁）|對(duì)263AB |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 154K |
| 代理商： | STB85NF55T4 |
3/9
STB85NF3LL
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
Note: 1. Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
V
DD
= 15V, I
D
= 30A
R
G
= 4.7
V
GS
= 4.5V
(see test circuit, Figure 3)
Min.
Typ.
22
Max.
Unit
ns
t
r
Rise Time
130
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24V, I
D
= 60A,
V
GS
= 4.5V
30
9
12.5
40
nC
nC
nC
Parameter
Test Conditions
V
DD
= 15V, I
D
= 30A,
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 3)
Min.
Typ.
36.5
36.5
Max.
Unit
ns
ns
Turn-off-Delay Time
Fall Time
t
d(off)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =24V,I
D
=30A
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 5)
32
23
40
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
85
A
I
SDM
(2)
Source-drain Current (pulsed)
340
A
V
SD
(1)
Forward On Voltage
I
SD
= 85A, V
GS
= 0
I
SD
= 85A, di/dt = 100A/
μ
s,
V
DD
= 15V, T
j
= 150
°
C
(see test circuit, Figure 5)
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
65
105
3.4
ns
nC
A
Thermal Impedence
Safe Operating Area
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB9NK60-1 | N-CHANNEL 600V 0.85 OHM 7A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET |
| STB9NB50T4 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8.6A I(D) | TO-263AB |
| STB9NB60-1 | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 9A I(D) | TO-262AA |
| STB9NB60T4 | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 9A I(D) | TO-263AB |
| STB9NK60Z-1 | CONNECTOR ACCESSORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB85NS04Z | 功能描述:MOSFET N-Channel 11mOHM Pwr Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB86600 | 制造商:AXIOMTEK 制造商全稱:AXIOMTEK 功能描述:VGA and LCD supported |
| STB8GA38 | 制造商:n/a 功能描述:Ships in 2 days |
| STB8GA516 | 制造商:n/a 功能描述:Ships in 2 days |
| STB8N50ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。