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參數(shù)資料
| 型號： | STB9NB60-1 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 9A I(D) | TO-262AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 600V的五（巴西）直| 9A條（丁）|對262AA |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 581K |
| 代理商： | STB9NB60-1 |
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
2/13
ABSOLUTE MAXIMUM RATINGS
Symbol
(
l
) Pulse width limited by safe operating area
(1) I
SD
≤
7A, di/dt
≤
200
μ
A, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
Parameter
Value
Unit
TO-220 /
D
2
PAK / I
2
PAK
TO-220FP
V
DS
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
Gate- source Voltage
600
V
V
DGR
600
V
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
7
7 (*)
A
4.4
4.4 (*)
A
Drain Current (pulsed)
28
28 (*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
125
30
W
1
0.24
W/°C
V
ESD(G-S)
dv/dt (1)
V
ISO
T
j
T
stg
4000
V
4.5
V/ns
Insulation Withstand Voltage (DC)
-
2500
V
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
TO-220
I
2
PAK
D
2
PAK
TO-
220FP
Rthj-case
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
Thermal Resistance Junction-ambient Max
1
4.16
°C/W
Rthj-pcb
30
°C/W
Rthj-amb
T
l
62.5
300
°C/W
°C
Maximum Lead Temperature For Soldering Purpose
Parameter
Max Value
7
Unit
A
235
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB9NB60T4 | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 9A I(D) | TO-263AB |
| STB9NK60Z-1 | CONNECTOR ACCESSORY |
| STB9NK60ZFD | N-CHANNEL 600V 0.85 OHM 7A TO-220/TO-220FP/D2PAK FAST DIODE SUPERMESH POWER MOSFET |
| STF9NK60ZFD | Fuse Holder; Fuse Size/Group:13/32 x 1-1/2 "; Body Material:Thermoplastic; Leaded Process Compatible:Yes; Mounting Type:Screw/Quick Connect RoHS Compliant: Yes |
| STP9NK60ZFD | N-CHANNEL 600V 0.85 OHM 7A TO-220/TO-220FP/D2PAK FAST DIODE SUPERMESH POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB9NB60T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 9A I(D) | TO-263AB |
| STB9NC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh⑩II MOSFET |
| STB9NC60-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh⑩II MOSFET |
| STB9NK50Z | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 500V 7.2A D2PAK |
| STB9NK50ZFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 0.72ohm - 7.2A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH⑩ Power MOSFET |
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