參數(shù)資料
型號(hào): STC20DE90
英文描述: 900 V 20 A 60 MOHM ESBT
中文描述: 900 V 20甲60毫歐內(nèi)酰胺酶
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 79K
代理商: STC20DE90
THERMAL DATA
R
thj-case
R
thc-h
Thermal Resistance Junction-Case Max
Thermal Resistance Case-heatsink With Conductive Grease
Applied Max
tbd
tbd
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
A
I
CS(SS)
Collector-Source
Current
(V
BS
= V
GS
=0 V)
Base-Source Current
(I
C
= 0, V
GS
=0 V)
Source-Base Current
(I
C
= 0, V
GS
=0 V)
Gate-Source Leakage
(V
BS
= 0 V)
Collector-Source ON
Voltage
Equivalent ON
Resistance
DC Current Gain
V
CS(SS)
= 900 V
100
I
BS(OS)
V
BS(OS)
= 30 V
10
μ
A
I
SB(OS)
V
SB(OS)
= 10 V
100
μ
A
I
GS(S)
V
GS
=
±
20 V
100
nA
V
CS(ON)
V
GS
= 10 V I
C
= 15 A
I
B
= 3 A
V
GS
= 10 V I
C
= 15 A
I
B
= 3 A
I
C
= 15 A V
CS
= 1 V V
GS
= 10 V
I
C
= 15 A I
B
= 3 A
V
GS
= 10 V
V
BS
= V
GS
I
B
= 250
μ
A
1
1.4
V
R
CS(ON)
60
75
m
h
FE
6
9
12
V
BS(ON)
Base-Source ON
Voltage
Gate Threshold
Voltage
Input Capacitance
1.4
1.8
V
V
GS(th)
1
1.7
2.5
V
C
iss
Q
GS
tbd
tbd
tbd
tbd
pF
Gate-Source Charge
tbd
tbd
tbd
tbd
nC
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
tbd
tbd
tbd
tbd
tbd
tbd
tbd
μ
s
ns
t
d(on)
INDUCTIVE LOAD
Time Delay Turn-on
tbd
tbd
tbd
tbd
ns
t
r(on)
V
CS(dyn)
INDUCTIVE LOAD
Time Rise Turn-off
tbd
tbd
tbd
tbd
ns
Collector-Source
Dynamic Voltage
Maximum Collector
Source Voltage
without Snubber
tbd
tbd
tbd
tbd
V
V
CSW
tbd
tbd
tbd
tbd
V
STC20DE90
2/4
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