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參數(shù)資料
| 型號(hào)： | STD10PF06-1 |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-251AA |
| 中文描述： | 晶體管| MOSFET的| P通道| 60V的五（巴西）直| 10A條（丁）|對(duì)251AA |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 171K |
| 代理商： | STD10PF06-1 |
3/10
STD100NH02L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
(
)
Pulse width limitedby safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 10 V
R
G
= 4.7
(Resistive Load, Figure 3)
I
D
= 30 A
V
GS
= 10 V
15
200
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10 V I
D
= 60 A V
GS
= 10 V
62
12
8
84
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 10 V
R
G
= 4.7
,
(Resistive Load, Figure 3)
I
D
= 30 A
V
GS
= 10 V
60
35
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM(
)
Source-drain Current
Source-drain Current (pulsed)
60
240
A
A
V
SD(*)
Forward On Voltage
I
SD
= 60 A
V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 60 A
V
DD
= 15 V
(see test circuit, Figure 5)
di/dt = 100A/
μ
s
T
j
= 150
°
C
47
58
2.5
ns
nC
A
ELECTRICAL CHARACTERISTICS
(continued)
Safe Operating Area
Thermal Impedance
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