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參數(shù)資料
| 型號(hào)： | STD10PF06T4 |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| P通道| 60V的五（巴西）直| 10A條（?。﹟對(duì)252AA |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 171K |
| 代理商： | STD10PF06T4 |
STD100NH02L
2/10
THERMAL DATA
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25
°
C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(*
)
DYNAMIC
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
1.5
100
300
°
C/W
°
C/W
°
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0
20
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125
°
C
1
10
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
20V
±
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250
μ
A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 30 A
0.0038
0.0048
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs(*)
Forward Transconductance
V
DS
= 10 V
I
D
= 30 A
50
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 15V f = 1 MHz V
GS
= 0
3940
1020
110
pF
pF
pF
R
G
Gate Input Resistance
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
1.1
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