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參數(shù)資料
| 型號： | STD16NE06-1 |
| 廠商： | 意法半導體 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-251AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 16A條（?。﹟對251AA |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 15K |
| 代理商： | STD16NE06-1 |
12-28-98
SB98107
Rev. A
Electrical Characteristics
I
2
T (Amp
2
Seconds)
Pre-
Arcing
0.8
5.4
15
28
160
293
800
1600
Nom
Rated
Voltage
Dimensions (Inches/mm)
Catalog
Number
STD2
STD4
STD6
STD10
STD16
STD20
STD25
STD32
Ampere
Rating
2
4
6
10
16
20
25
32
Total At
240V
1
8
22
42
2500
450
1300
2500
Watts
Loss
0.5
1
1.6
1.2
1.5
1.7
1.8
2.4
A
B
C
D
E
F
G
H
240AC
47.0
35.0
24.0
11.0
4.7
12.1
1.0
13.1
Dimensional Data:
C
E
B
A
F
H
G
D
E
Time-Current Characteristic Curve
(Full Size Curves Available)
Industrial HRC Fuse
12 x 47mm, BS 88, IEC 269-1
Offset Bolted Tags
S T D
Bussmann
Form No. STD
Page 1 of 1
BIF Doc #4123
The only controlled copy of this BIF document is the electronic read-only version located on the Bussmann Network Drive. All other copies of this BIF document are by definition uncontrolled. This bulletin is intended to
clearly present comprehensive product data and provide technical information that will help the end user with design applications. Bussmann reserves the right, without notice, to change design or construction of any
products and to discontinue or limit distribution of any products. Bussmann also reserves the right to change or update, without notice, any technical information contained in this bulletin. Once a product has been select-
ed, it should be tested by the user in all possible applications.
CATALOG SYMBOL: STD
INDUSTRIAL HRC FUSE
OFFSET BOLTED TAGS
PACKAGE QUANTITY: 20
33kA INTERRUPTING RATING
1
1
1
1
1,000
100
10
1
.1
.01
CURRENT IN AMPERES
T
CURRENT
RATING
2
4
1
2
2
3
6
1
相關PDF資料 |
PDF描述 |
|---|---|
| STD16NE06T4 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-252AA |
| STD110 | STD110|Data Sheet |
| STD110NH02LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 80A I(D) | TO-252AA |
| STD111 | STD111|Data Sheet |
| STD12N05-1 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 12A I(D) | TO-251 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STD16NE06L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 60V - 0.07 ohm - 16A - DPAK STripFET POWER MOSFET |
| STD16NE06L-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 60V - 0.07 ohm - 16A - TO-251 STripFET POWER MOSFET |
| STD16NE06LT4 | 功能描述:MOSFET N-Ch 60 Volt 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD16NE06T4 | 功能描述:MOSFET N-Ch 60 Volt 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD16NE10 | 功能描述:MOSFET RO 511-STD15NF10 TO-252 N-CH 100V 16A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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