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參數(shù)資料
| 型號(hào)： | STD25NF10L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 100V - 0.030 ohm - 25A DPAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道100V的- 0.030歐姆- 25A條的DPAK低柵極電荷STripFET⑩二功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 451K |
| 代理商： | STD25NF10L |
1/9
February 2003
STD25NF10L
N-CHANNEL 100V - 0.030
- 25A DPAK
LOW GATE CHARGE STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.030
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
LOW THRESHOLD DEVICE
I
LOGIC LEVEL DEVICE
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements
APPLICATIONS
I
HIGH-EFFICIENCY DC-DC CONVERTERS
I
UPS AND MOTOR CONTROL
TYPE
V
DSS
R
DS(on)
I
D
STD25NF10L
100 V
< 0.035
25 A
1
3
DPAK
TO-252
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(*)
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS (2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(*) Current Limited by Package
(1) I
SD
≤
25A, di/dt
≤
300A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 12.5A, V
DD
= 50V
Parameter
Value
100
100
± 16
25
25
100
100
0.67
20
450
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD25NF10LA | 功能描述:MOSFET 100 V Mosfet 35 RDS 25A D2PAK RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD25NF10LT4 | 功能描述:MOSFET N-Ch 100 Volt 25 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD25NF10LT4 | 制造商:STMicroelectronics 功能描述:MOSFET N REEL 2500 |
| STD25NF10LT4 | 制造商:STMicroelectronics 功能描述:MOSFET |
| STD25NF10T4 | 功能描述:MOSFET N-Ch 100 Volt 25 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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