參數(shù)資料
型號： STD2NC60-1
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2A I(D) | TO-251AA
中文描述： 晶體管| MOSFET的| N溝道| 600V的五（巴西）直|甲（?。﹟對251AA
文件頁數(shù)： 3/10頁
文件大?。?/td> 174K
代理商： STD2NC60-1
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 200 V
R
G
= 50
(see test circuit, figure 3)
V
DD
= 400 V
R
G
= 50
(see test circuit, figure 5)
V
DD
= 400 V
I
D
= 1 A
V
GS
= 10 V
35
85
50
120
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 2 A
V
GS
= 10 V
28
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 2 A
V
GS
= 10 V
18
5
8
25
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 400 V
R
G
= 50
(see test circuit, figure 5)
I
D
= 2 A
V
GS
= 10 V
25
15
45
35
25
65
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
2
8
A
A
V
SD
(
)
t
rr
I
SD
= 2 A
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
C
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 2 A
V
DD
= 100 V
(see test circuit, figure 5)
330
2.5
15
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5%
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STD2N50
3/10
相關PDF資料
PDF描述
STD2NC70ZT4 TRANSISTOR | MOSFET | N-CHANNEL | 700V V(BR)DSS | 2.3A I(D) | TO-252AA
STD2NM60T4 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2A I(D) | TO-252AA
STD30PF30L Cartridge Fuse; Current Rating:5A; Voltage Rating:125V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229P
STD30NF03L-1 Cartridge Fuse; Current Rating:6A; Voltage Rating:125V; Fuse Type:Fast Acting; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Series:225P
STD30NF03LT4 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 30A I(D) | TO-263AB
相關代理商/技術參數(shù)
參數(shù)描述
STD2NC70Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 4.1ohm - 2.3A DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
STD2NC70Z-1 制造商:STMicroelectronics 功能描述:
STD2NC70ZT4 制造商:STMicroelectronics 功能描述:
STD2NK100Z 功能描述:MOSFET N-Channel 1000V Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD2NK60Z 功能描述:MOSFET N Ch 600V 7.2Ohm 1.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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