參數(shù)資料
型號(hào)： STD35NF3LLT4
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 35A I(D) | TO-252AA
中文描述： 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 35A條（丁）|對(duì)252AA
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 93K
代理商： STD35NF3LLT4
1/10
February 2002
.
STD35NF3LL
STD35NF3LL-1
N-CHANNEL 30V - 0.014
- 35A IPAK/DPAK
STripFET
II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.016
@ 4.5V
I
OPTIMAL R
DS
(on) x Qg TRADE-OFF @ 4.5V
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
I
LOW THRESHOLD DRIVE
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1”)
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
DESCRIPTION
This application specific Power MOSFET is the third
genaration of STMicroelectronis unique ”Single Feature
Size
” strip-based process. The resulting transistor
shows the best trade-off between on-resistance and gate
charge. When used as high and low side in buck
regulators, it gives the best performance in terms of both
conduction and switching losses. This is extremely
important for motherboards where fast switching and
high efficiency are of paramount importance.
APPLICATIONS
I
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
TYPE
V
DSS
R
DS(on)
I
D
STD35NF3LL
STD35NF3LL-1
30 V
30 V
< 0.0195
< 0.0195
35 A
35 A
3
2
1
1
3
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25
°
C
I
D
Drain Current (continuos) at T
C
= 100
°
C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25
°
C
Derating Factor
E
AS(1)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
)
Pulse width limitedby safe operating area.
(1) Starting T
j
= 25
o
C, I
D
= 17.5 A, V
DD
= 24 V
Parameter
Value
30
30
±
16
35
25
140
50
0.33
300
Unit
V
V
V
A
A
A
W
W/
°
C
mJ
-55 to 175
°
C
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
PDF描述
STD35NF06 N-CHANNEL 60V - 0.018ohm - 35A DPAK STripFET⑩II MOSFET
STD38NH02L-1 Cartridge Fuse; Current Rating:1.25A; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229P
STD3N25-1 Cartridge Fuse; Current Rating:2.25A; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229P RoHS Compliant: Yes
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STD35P6LLF6 功能描述:MOSFET P-CH 60V 35A DPAK 制造商:stmicroelectronics 系列:STripFET? F6 包裝:剪切帶（CT） 零件狀態(tài):有效 FET 類型:MOSFET P 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:60V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:35A（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:28 毫歐 @ 17.5A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:2.5V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:30nC @ 4.5V 不同 Vds 時(shí)的輸入電容（Ciss）:3780pF @ 25V 功率 - 最大值:70W 工作溫度:175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-252-3，DPak（2 引線+接片），SC-63 供應(yīng)商器件封裝:DPAK 標(biāo)準(zhǔn)包裝:1
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