- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385874 > STD5NM50 (意法半導(dǎo)體) N-CHANNEL 500V - 0.7ohm - 7.5A DPAK/IPAK MDmesh⑩Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | STD5NM50 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 500V - 0.7ohm - 7.5A DPAK/IPAK MDmesh⑩Power MOSFET |
| 中文描述： | N溝道500V - 0.7ohm - 7.5A的DPAK封裝/像是iPak的MDmesh⑩功率MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 463K |
| 代理商： | STD5NM50 |
1/10
September 2002
STD5NM50
STD5NM50-1
N-CHANNEL 500V - 0.7
- 7.5A DPAK/IPAK
MDmeshPower MOSFET
(1) I
SD
≤
5A, di/dt
≤
400A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
n
TYPICAL R
DS
(on) = 0.7
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
n
100% AVALANCHE TESTED
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESISTANCE
n
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
l
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STD5NM50
STD5NM50-1
500V
500V
<0.8
<0.8
7.5 A
7.5 A
Parameter
Value
Unit
500
V
500
V
±30
V
7.5
A
4.7
A
30
A
100
W
0.8
15
W/°C
V/ns
– 55 to 150
°C
1
3
DPAK
TO-252
3
2
1
IPAK
TO-251
(Add Suffix “-1”)
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD95NH02L | N-CHANNEL 24V - 0.0039ohm - 80A DPAK ULTRA LOW GATE CHARGE STripFET MOSFET |
| STD95NH02LT4 | N-CHANNEL 24V - 0.0039ohm - 80A DPAK ULTRA LOW GATE CHARGE STripFET MOSFET |
| STE24NA100 | N - CHANNEL 1000V - 0.35ohm - 24A - ISOTOP FAST POWER MOSFET |
| STGD3NB60H | N-CHANNEL 3A - 600V TO-252 PowerMESH IGBT |
| STGD7NB120S-1 | N-CHANNEL 7A - 1200V IPAK Power MESH IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD5NM50-1 | 功能描述:MOSFET N-Ch 500 Volt 7.5 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD5NM50T4 | 功能描述:MOSFET N-Ch 500 Volt 7.5 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD5NM50T4 | 制造商:STMicroelectronics 功能描述:Transistor Polarity:N Channel |
| STD5NM60 | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 600V 5A DPAK |
| STD5NM60_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh? Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。