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參數(shù)資料
| 型號： | STGE50NB60HD |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 50A - 600V ISOTOP PowerMESH IGBT |
| 中文描述： | N溝道50A條- 600V的IGBT的1000V的集電極PowerMESH |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 47K |
| 代理商： | STGE50NB60HD |
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STGE50NB60HD
6/6
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STGE50NC60VD | 功能描述:IGBT 晶體管 N-chnl 50A-600V PowerMESH RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGE50NC60WD | 功能描述:IGBT 晶體管 N-Ch 600volt 50 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGF10H60DF | 制造商:STMicroelectronics 功能描述:IGBT 600V 20A 30W TO220FP 制造商:STMicroelectronics 功能描述:SADA_600 V, 10 A high speed trench gate field-stop IGBT |
| STGF10NB60SD | 功能描述:IGBT 晶體管 N-Ch 600 Volt 10 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGF10NB60SD_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 10A - 600V - TO-220FP PowerMESH TM IGBT |
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