參數(shù)資料
型號: STI1020
英文描述: TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 10A I(C) | TO-3
中文描述: 晶體管|晶體管|達林頓| npn型| 120伏特五(巴西)總裁| 10A條一(c)|至3
文件頁數(shù): 1/1頁
文件大?。?/td> 161K
代理商: STI1020
相關(guān)PDF資料
PDF描述
STI17770 Transient Surge Protection Thyristor; Package/Case:MS-013; Current, It av:2.2A; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Capacitance:60pF; Current Rating:2.2A; Forward Current:5A; Forward Voltage:270V
STI17771 Transient Surge Protection Thyristor; Package/Case:MS-013; Current, It av:2.2A; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Capacitance:60pF; Current Rating:2.2A; Forward Current:5A; Forward Voltage:270V
STI17772 Transient Surge Protection Thyristor; Package/Case:SIP; Current, It av:2.2A; Capacitance:30pF; Current Rating:2.2A; Forward Current:5A; Forward Voltage:270V; Holding Current:150A; Mounting Type:Through Hole
STI17773 Transient Surge Protection Thyristor; Thyristor Type:Sidac; Current, It av:2.2A; Package/Case:TO-220; Reel Quantity:1500; Capacitance:30pF; Current Rating:2.2A; Forward Current:5A; Forward Voltage:270V; Holding Current:150mA RoHS Compliant: NA
STI17774 TRANSISTOR | BJT | DARLINGTON | PNP | 450V V(BR)CEO | TO-218AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STI10N62K3 功能描述:MOSFET N-CH 60V 8.4A I2PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:SuperMESH3™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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