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參數(shù)資料
| 型號(hào)： | STK11C68-W30I |
| 英文描述： | NVRAM (EEPROM Based) |
| 中文描述： | NVRAM中（EEPROM的基礎(chǔ)） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 286K |
| 代理商： | STK11C68-W30I |
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STK11C68-W35 | Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:35mA; Package/Case:D-PAK; Current, It av:8A; Gate Trigger Current Max, Igt:35mA |
| STK11C68-W35I | Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:35mA; Current, It av:8A; Gate Trigger Current Max, Igt:35mA; Holding Current:35mA RoHS Compliant: Yes |
| STK11C68-W45 | NVRAM (EEPROM Based) |
| STK11C68-W45I | Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:8A; Holding Current:50mA |
| STK11C48-5P30 | Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STK11C68-W35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| STK11C68-W35I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| STK11C68-W45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| STK11C68-W45I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| STK11C88 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32K x 8 nvSRAM QUANTUM TRAP CMOS NONVOLATILE STATIC RAM |
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