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參數(shù)資料
| 型號(hào)： | STN1802 |
| 英文描述： | LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 低壓快速開關(guān)NPN電源晶體管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | STN1802 |
THERMAL DATA
R
thj-amb
Device mounted on a PCB area of 1 cm
2
.
Thermal Resistance Junction-Ambient Max
78
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
A
I
CBO
Collector Cut-off
Current (I
E
= 0)
Emitter Cut-off Current
(I
C
= 0)
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
h
FE
DC Current Gain
V
CB
= 40 V
0.1
I
EBO
V
EB
= 4 V
0.1
μ
A
I
C
= 10
μ
A
80
V
I
C
= 1 mA
60
V
I
E
= 10
μ
A
6
V
I
C
= 2 A I
B
= 100 mA
I
C
= 3 A I
B
= 150 mA
I
C
= 2 A I
B
= 100 mA
150
200
300
400
mV
mV
0.9
1.2
V
I
C
= 100 mA V
CE
= 2 V
I
C
= 3 A V
CE
= 2 V
V
CE
= 10 V I
C
= 50 mA
V
CB
= 10 V f = 1 MHz
200
100
400
f
T
Transition frequency
150
MHz
C
CBO
Collector-Base
Capacitance
RESISTIVE LOAD
Turn- on Time
Storage Time
Fall Time
50
pF
t
ON
t
s
t
f
I
C
= 1 A V
CC
= 30 V
I
B1
= - I
B2
= 0.1 A
50
1.35
120
ns
m
s
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle = 1.5 %
STN1802
2/4
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