參數(shù)資料
型號: STP22NE03L
廠商: 意法半導(dǎo)體
英文描述: N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N溝道增強模式功率MOSFET)
中文描述: N溝道增強模式“的單一的功能SIZETM”功率MOSFET(不適用溝道增強模式功率MOSFET的)
文件頁數(shù): 2/5頁
文件大?。?/td> 74K
代理商: STP22NE03L
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
2.5
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max,
δ < 1%)
22
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25
oC, ID = IAR, VDD = 15 V)
TBD
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250
A
VGS = 0
30
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
Tc =125
oC
1
10
A
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS =
± 15 V
± 100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
VDS = VGS
ID = 250
A
1
1.7
2.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V
ID = 11 A
VGS = 5V
ID = 11 A
0.034
0.049
0.05
0.06
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
22
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (
)
Forward
Transconductance
VDS > ID(on) x RDS(on)max
ID =11 A
7
13
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V
f = 1 MHz
VGS = 0
680
160
60
950
220
85
pF
STP22NE03L
2/5
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