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參數(shù)資料
| 型號(hào)： | STP55NF03L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 30V - 0.01 ohm - 55A TO-220/D2PAK/I2PAK STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道30V的- 0.01歐姆- 55A條TO-220/D2PAK/I2PAK STripFET⑩二功率MOSFET |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 85K |
| 代理商： | STP55NF03L |
1/8
February 2001
STP55NF03L
N-CHANNEL 30V - 0.01
- 55A TO-220
STripFET
POWER MOSFET
I
TYPICAL RDS(on) = 0.01
I
OPTIMIMIZED FOR HIGH SWITCHING
OPERATIONS
I
LOW GATE CHARGE
I
LOGIC LEVEL GATE DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
Size
” strip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
“Single
Feature
APPLICATIONS
I
LOW VOLTAGE DC-DC CONVERTERS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
HIGH EFFICIENCY SWITCHING CIRCUITS
TYPE
V
DSS
R
DS(on)
I
D
STP55NF03L
30 V
<0.013
55 A
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25
°
C
I
D
Drain Current (continuos) at T
C
= 100
°
C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25
°
C
Derating Factor
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
)Pulse width limited by safe operating area.
Parameter
Value
30
30
±
15
55
39
220
80
0.53
–60 to 175
175
Unit
V
V
V
A
A
A
W
W/
°
C
°
C
°
C
INTERNAL SCHEMATIC DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP55NF06 | 功能描述:MOSFET N-Ch 60 Volt 55 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP55NF06 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| STP55NF06FP | 功能描述:MOSFET N-Ch 60 Volt 55 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP55NF06FP | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220FP |
| STP55NF06L | 功能描述:MOSFET N-Ch 60 Volt 55 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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