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參數(shù)資料
| 型號： | STP6NC80FP |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.1A I(D) | TO-220FP |
| 中文描述： | 晶體管| MOSFET的| N溝道| 800V的五（巴西）直| 5.1AI（四）|對220FP |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 75K |
| 代理商： | STP6NC80FP |
1/8
PRELIMINARY DATA
April 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STP6NC80Z - STP6NC80ZFP
STB6NC80Z-1
N-CHANNEL 800V - 1.8
- 5.1A TO-220/TO-220FP
/I
PAK
Zener-Protected PowerMESH
III MOSFET
n
TYPICAL R
DS
(on) = 1.8
I
EXTREMELY HIGH dv/dt AND CAPABILITY
GATE-TO- SOURCE ZENER DIODES
I
100% AVALANCHE TESTED
I
VERY LOW GATE INPUT RESISTANCE
I
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY
Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zenerdiodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
I
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
I
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
(
)Pulse width limitedby safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP6NC80Z/FP
800V
< 2
5.1 A
STB6NC80Z-1
800V
< 2
5.1 A
Parameter
Value
Unit
STP(B)6NC80Z(-1)
STP6NC80ZFP
V
DS
V
DGR
V
GS
I
D
I
D
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
800
V
800
V
Gate- source Voltage
Drain Current (continuos) at T
C
= 25
°
C
Drain Current (continuos) at T
C
= 100
°
C
±
25
V
5.1
5.1(*)
A
3.2
3.2(*)
A
I
DM(1)
P
TOT
Drain Current (pulsed)
20
20(*)
A
Total Dissipation at T
C
= 25
°
C
Derating Factor
125
40
W
1
0.32
W/
°
C
I
GS
Gate-source Current
±
50
mA
V
ESD(G-S)
dv/dt
Gate source ESD(HBM-C=100pF, R=15K
)
Peak Diode Recovery voltage slope
3
KV
3
V/ns
V
ISO
T
stg
T
j
Insulation Winthstand Voltage (DC)
--
2000
V
°
C
°
C
Storage Temperature
–65 to 150
Max. Operating Junction Temperature
150
(1)I
SD
≤
5.1A, di/dt
≤
100A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2)
.
Limited only by maximum temperature allowed
TO-220
2
3
TO-220FP
123
I PAK
(Tabless TO-220)
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| STP6NC80Z | 功能描述:MOSFET TO-220AB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| STP6NC90Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
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