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參數(shù)資料
| 型號： | STPQ1NC60R |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 300MA I(D) | TO-92 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 600V的五（巴西）直| 300毫安（?。﹟到92 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 94K |
| 代理商： | STPQ1NC60R |
1/9
May 2002
STQ1NC60R
N-CHANNEL 600V - 12
- 0.3A TO-92
PowerMESH
II Power MOSFET
I
TYPICAL R
DS
(on) = 12
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
NEW HIGH VOLTAGE BENCHMARK
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
II
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprietaryedge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
I
LOW SWITCH MODE POWER SUPPLIES
(SMPS)
I
BATTERY CHARGER
ORDERING INFORMATION
SALES TYPE
TYPE
V
DSS
R
DS(on)
I
D
STPQ1NC60R
600 V
< 15
0.3 A
MARKING
PACKAGE
PACKAGING
STQ1NC60R
Q1NC60R
TO-92
BULK
STQ1NC60R-AP
Q1NC60R
TO-92
AMMOPACK
TO-92
BULK
TO-92
(AMMOPACK)
INTERNAL SCHEMATIC DIAGRAM
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