參數(shù)資料
型號(hào): STPS2545CT
廠商: STMICROELECTRONICS
元件分類(lèi): 整流器
英文描述: 12.5 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
文件頁(yè)數(shù): 4/10頁(yè)
文件大?。?/td> 130K
代理商: STPS2545CT
STPS2545C
Characteristics
Doc ID 8736 Rev 3
3/10
To evaluate the conduction losses use the following equation :
P = 0.42 x IF(AV) + 0.012 x IF
2
(RMS)
Table 4.
Static electrical characteristics (per diode)
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
125
A
Tj = 125 °C
9
25
mA
VF
Forward voltage drop
Tj = 125 °C
IF = 12.5 A
0.50
0.57
V
Tj = 25 °C
IF = 25 A
0.84
Tj = 125 °C
IF = 25 A
0.65
0.72
1.
Pulse test : tp = 380 s, δ < 2%
Figure 1.
Conduction losses versus average
current)
Figure 2.
Average forward current versus
ambient temperature (
δ = 0.5)
0
1
2
3
4
5
6
7
8
9
10
0.0
2.5
5.0
7.5
10.0
12.5
15.0
I
(A)
F(AV)
δ = 0.05 δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
P
(W)
F(AV)
T
δ=tp/T
tp
0
2
4
6
8
10
12
14
0
25
50
75
100
125
150
175
T
(°C)
amb
Rth
(j-a)=Rth(j-c)
Rth
(j-a)=50°C/W
TO-220AB/DPAK
I
(A)
F(AV)
T
δ=tp/T
tp
Figure 3.
Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P(t )
P
(1s)
ARM p
ARM
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (°C)
j
P(t )
P
(25°C)
ARM p
ARM
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