參數(shù)資料
型號: STPS30L30CTS
英文描述: 30V 30A Schottky Common Cathode Diode in a D-Pak package
中文描述: 30V的30A條共陰極肖特基二極管在D - Pak封裝
文件頁數(shù): 2/5頁
文件大?。?/td> 99K
代理商: STPS30L30CTS
STPS30L30CT/CG/CR
2/5
Symbol
I
R
*
Parameter
Reverse leakage cur-
rent
Tests Conditions
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Min.
Typ.
Max.
1.5
350
0.46
0.37
0.57
0.5
Unit
mA
mA
V
V
R
= V
RRM
170
V
F
*
Forward voltage drop
I
F
= 15 A
I
F
= 15 A
I
F
= 30 A
I
F
= 30 A
0.33
0.43
Pulse test : * tp = 380 μs,
δ
< 2%
To evaluate the conduction losses use the following equation :
P = 0.24x I
F(AV)
+ 0.009 I
F2(RMS)
Fig. 1:
Average forward power dissipation versus
average forward current (per diode).
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol
R
th (j-c)
Parameter
Value
1.5
0.8
0.1
Unit
°C/W
Junction to case
Per diode
Total
Coupling
R
th (c)
°
C/W
THERMAL RESISTANCE
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
9
10
IF(av) (A)
PF(av)(W)
T
δ
=tp/T
tp
δ
= 1
δ
= 0.5
δ
= 0.2
δ
= 0.1
δ
= 0.05
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
IF(av)(A)
Rth(j-a)=15°C/W
Rth(j-a)=Rth(j-c)
Rth(j-a)=50°C/W
T
δ
=tp/T
tp
Tamb(°C)
Fig.
temperature (
δ
=0.5) (per diode).
2:
Average
current
versus
ambient
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (°C)
P
ARM
(25°C)
P
ARM p
Fig. 4:
Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (μs)
P
ARM
(1μs)
P
ARM p
Fig. 3:
Normalized avalanche power derating
versus pulse duration.
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