參數(shù)資料
型號: STPS60L40C
元件分類: 參考電壓二極管
英文描述: Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
中文描述: 250 的低電流運算,低反向泄露,低噪聲穩(wěn)壓二極管
文件頁數(shù): 2/4頁
文件大?。?/td> 52K
代理商: STPS60L40C
STPS60L30CW
2/4
Symbol
I
R
*
Parameter
Reverse leakage
current
Tests Conditions
Tj = 25
°
C
Tj = 125
°
C
Tj = 25
°
C
Tj = 125
°
C
Tj = 25
°
C
Tj = 125
°
C
Min.
Typ.
Max.
4
500
0.46
0.38
0.55
0.5
Unit
mA
mA
V
V
R
= V
RRM
250
V
F
*
Forward voltage drop
I
F
= 30 A
I
F
= 30 A
I
F
= 60 A
I
F
= 60 A
0.33
0.45
Pulse test : * tp = 380 μs,
δ
< 2%
To evaluate the conduction losses use the following equation :
P = 0.26x I
F(AV)
+ 0.004 I
F2(RMS)
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol
R
th (j-c)
Parameter
Value
0.8
0.45
0.1
Unit
°C/W
Junction to case
Per diode
Total
Coupling
R
th (c)
°C/W
THERMAL RESISTANCE
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
12
14
16
18
PF(av)(W)
δ=0.05
δ=0.5
δ=1
δ=0.1
δ=0.2
IF(av) (A)
T
δ
=tp/T
tp
Fig. 1:
Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
IF(av)(A)
Rth(j-a)=15°C/W
Rth(j-a)=Rth(j-c)
Tamb(°C)
T
δ
=tp/T
tp
Fig. 2:
Average forward current versus ambient
temperature (
δ
=0.5) (per diode).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (°C)
P
ARM
(25°C)
P
ARM p
Fig. 4:
Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (μs)
p
P
ARM
(1μs)
P
ARM p
Fig. 3:
Normalized avalanche power derating
versus pulse duration.
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