DSCONTNUEDPRODUCT
FET Channel Temperature, T
J
......
+150
°
C
Internal Frame Temperature, T
F
...
+125
°
C
Operating Temperature Range,
T
A
...............................
-20
°
C to +125
°
C
Storage Temperature Range,
T
stg
.............................
-30
°
C to +125
°
C
—FORREFERENCEONLY
D
2
STR-S6411
AND
STR-S6411F
These devices are specifically designed to meet the requirements
for increased integration and reliability in off-line flyback (STR-S6411)
PWM mode. Each device incorporates the primary control and drive
circuits with an avalanche-rated high-voltage power MOSFET. Crucial
system parameters such as switching frequency and maximum duty
cycle are fixed during manufacture. The STR-S6411 and STR-S6411F
differ only in their maximum duty cycle. Control circuit decoupling and
layout are optimized within each device.
Cycle-by-cycle and average-current limiting, soft start, under-
voltage lockout with hysteresis, and thermal shutdown protect the
device during all normal and overload conditions. The performance and
reliability of these devices, and their variable-frequency counterparts,
has been proven in substantial volume production.
The requirements of high dielectric isolation and low transient
thermal impedance and steady-state thermal resistance are satisfied in
an over-molded, 9-pin single in-line power package.
FEATURES
I
PWM Flyback Conversion or Forward Conversion
I
Output Power to 250 W
I
Pulse-by-Pulse Current Limiting
I
Fixed-Frequency 100 kHz PWM
I
Avalanche-Rated Power MOSFET Switch
I
Soft Start
I
Internal Under-Voltage Lockout and Thermal Shutdown
I
Low External Component Count
I
Over-Molded SIP with Isolated Heat Spreader
Always order by complete part number:
STR-S6411
or
STR-S6411F
.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V
IN
............................
35 V
Drain-Source Voltage, V
...............
800 V
Drain Current, I
continuous .....................................
±
5 A
single pulse, t
w
≤
1 ms ..................
±
20 A
Avalanche Energy, E
A
single pulse...............................
400 mJ
Gate-Source Voltage, V
GS
................
±
20 V
Gate-Drive Current Range,
I
G
.................................
-0.7 A to +1.5 A
Over-Current Protection Voltage Range,
V
OCP
.............................
-0.3 V to +4.0 V
Insulation RMS Voltage,
V
WM(RMS)
.....................................
2000 V
Package Power Dissipation,
+
SOURCE
DRAIN
UVLO
SIGNAL
GROUND
VIN
OVER-CURRENT
PROTECTION
Dwg. PK-003
SOFT
START
+
GATE
FDBK
PWM
POWER
GROUND
LATCH
REF.
1
2
3
4
5
6
7
8
9
OSC.
OFF-LINE SWITCHING REGULATORS
– WITH POWER MOSFET OUTPUT