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參數(shù)資料
| 型號： | STTA5012 |
| 英文描述： | TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE |
| 中文描述： | TURBOSWITCH -超快速高壓二極管 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 330K |
| 代理商： | STTA5012 |
0
5
10
15
20
25
30
0
10
20
30
40
50
60
IF(av) (A)
P1(W)
δ
= 1
δ
= 0.5
δ
= 0.2
δ
= 0.1
T
δ
=tp/T
tp
Fig. 1:
Conduction losses versus average current
(per diode).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1
10
100
300
VFM(V)
IFM(A)
Tj=125°C
Fig. 2:
Forward voltage drop versus forward
current (maximum values, per diode).
1E-3
1E-2
1E-1
1E+0
5E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
δ
= 0.2
δ
= 0.5
Single pulse
δ
= 0.1
Fig. 3-1:
Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(ISOTOP).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
δ
= 0.1
δ
= 0.2
δ
= 0.5
Single pulse
Fig. 3-2:
Relative variation of thermal impedance
junction to case versus pulse duration (SOD93).
0
100
200
300
400
500
0
50
100
150
200
250
300
350
400
450
500
trr(ns)
VR=600V
Tj=125°C
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
dIF/dt(A/μs)
Fig. 5:
Reverse recovery time versus dI
F
/dt (90%
confidence, per diode).
0
100
200
300
400
500
0
5
10
15
20
25
30
35
40
45
50
55
IRM(A)
VR=600V
Tj=125°C
IF=2*IF(av)
IF=0.5*IF(av)
IF=IF(av)
dIF/dt(A/μs)
Fig. 4:
Peak reverse recovery current versus dI
F
/dt
(90% confidence, per diode).
STTA2512P / STTA5012TV1/2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STTA5012TV1 | 制造商:STMicroelectronics 功能描述:DIODE FAST |
| STTA5012TV1 | 制造商:STMicroelectronics 功能描述:DIODE MODULE FAST RECOVERY |
| STTA5012TV2 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE |
| STTA506 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE |
| STTA506B | 功能描述:整流器 5.0 Amp 600 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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