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參數(shù)資料
| 型號(hào)： | STTH4L06RL |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 整流器 |
| 英文描述： | 4 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | STTH4L06RL |
Characteristics
STTH4L06
2/8
Doc ID 16276 Rev 1
1
Characteristics
To evaluate the maximum conduction losses use the following equation:
P = 0.92 x IF(AV) + 0.045 x IF
2
(RMS)
Table 2.
Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
600
V
IF(RMS)
Forward rms current
10
A
IF(AV)
Average forward current
4
A
IFSM
Surge non repetitive forward current
tp = 8.3 ms sinusoidal
80
A
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature
175
°C
Table 3.
Thermal resistance
Symbol
Parameter
Maximum
Unit
Rth(j-l)
Junction to lead
Terminal length = 10 mm
DO-15
25
°C/W
DO-201AD
20
Rth(j-a)
Junction to ambient
DO-15
80
°C/W
DO-201AD
75
Table 4.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 5 ms, δ < 2%
Reverse leakage current
Tj = 25 °C
VR = VRRM
--
3
A
Tj= 150 °C
-
15
100
VF
(2)
2.
Pulse test: tp = 380 s, δ < 2%
Forward voltage drop
Tj = 25 °C
IF = 3 A
-
1.30
V
Tj = 150 °C
-
0.85
1.05
Tj = 150 °C
IF = 4 A
-
0.90
1.10
Table 5.
Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
trr
Reverse recovery time
dIF/dt = -50 A/s
IF = 1 A, VR = 30 V
-55
75
ns
dIF/dt = -100 A/s
-
40
55
IRM
Reverse recovery current
Tj = 25 °C
IF = 4 A, VR = 400 V,
dIF/dt = -100 A/s
-3
4
A
Tj = 150 °C
-
5
6.5
tfr
Forward recovery time
IF = 4 A, dIF/dt = 100 A/s,
VFR = 1.1 x VFmax
--
130
ns
VFP
Forward recovery voltage
IF = 4 A, dIF/dt = 100 A/s
-
7.5
V
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