參數(shù)資料
型號: STTH6110TV2
廠商: STMICROELECTRONICS
元件分類: 整流器
英文描述: 30 A, 1000 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, ISOTOP-4
文件頁數(shù): 3/8頁
文件大?。?/td> 143K
代理商: STTH6110TV2
STTH6110TV
Characteristics
3/8
Table 4.
Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
trr
Reverse recovery time
IF = 1 A, dIF/dt = -50 A/s,
VR = 30 V, Tj = 25° C
100
ns
IF = 1 A, dIF/dt = -100 A/s,
VR = 30 V, Tj = 25° C
53
70
IF = 1 A, dIF/dt = -200 A/s,
VR = 30 V, Tj = 25° C
42
55
IRM
Reverse recovery current
IF = 30 A, dIF/dt = -200 A/s,
VR = 600 V, Tj = 125° C
24
32
A
S
Softness factor
IF = 30 A, dIF/dt = -200 A/s,
VR = 600 V, Tj = 125° C
1
tfr
Forward recovery time
IF = 30 A
dIF/dt = 100 A/s
VFR = 1.5 x VFmax, Tj = 25° C
450
ns
VFP
Forward recovery voltage
IF = 30 A, dIF/dt = 100 A/s,
Tj = 25° C
5V
Figure 1.
Conduction losses versus
average current
Figure 2.
Forward voltage drop versus
forward current
P(W)
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
35
40
=0.05
=0.1
=0.2
=0.5
=1
T
I
(A)
F(AV)
I
(A)
FM
0
20
40
60
80
100
120
140
160
180
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Tj=25°C
(Maximum values)
Tj=150°C
(Maximum values)
Tj=150°C
(Typical values)
V
(V)
FM
Figure 3.
Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4.
Peak reverse recovery current
versus dIF/dt (typical values)
Z/R
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Single pulse
t (s)
p
I
(A)
RM
0
10
20
30
40
50
60
0
50
100
150
200
250
300
350
400
450
500
V
R=600V
T
j=125°C
I
F= 2 x IF(AV)
I
F= IF(AV)
I
F=0.5 x IF(AV)
dI /dt(A/s)
F
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