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參數(shù)資料
| 型號： | STU26NM60 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 26A I(D) | TO-220VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 600V的五（巴西）直|第26A條（丁）|對220VAR |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 134K |
| 代理商： | STU26NM60 |
STW26NM60, STU26NM60, STU26NM60I
2/11
ABSOLUTE MAXIMUM RATINGS
Symbol
(
l
) Pulse width limited by safe operating area
(1) I
SD
≤
26A, di/dt
≤
200A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance notonly the device’s
ESD capability,but also to make them safelyabsorb possible voltagetransients that may occasionally be
applied fromgate to souce. In this respect the Zenervoltage is appropriateto achieve anefficient and cost-
effective interventionto protect the device’s integrity.These integratedZener diodes thusavoid theusage
of external components.
Parameter
Value
Unit
STW26NM60
STU26NM60
STU26NM60I
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
Drain Current (continuos) at T
C
= 25
°
C
Drain Current (continuos) at T
C
= 100
°
C
±
30
V
30
26
26 (*)
A
18.9
16.38
16.38 (*)
A
Drain Current (pulsed)
Total Dissipation at T
C
= 25
°
C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
120
104
104 (*)
A
313
192
73
W
2.5
1.54
0.58
W/
°
C
V
V
ESD(G-S)
6000
dv/dt (1)
15
V/ns
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°
C
°
C
TO-247
0.4
Max220
0.65
Max220I
1.7
Rthj-case
Thermal Resistance Junction-case Max
°
C/W
°
C/W
°
C
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
T
l
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
13
Unit
A
740
mJ
Parameter
Test Conditions
Igss=
±
1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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