參數(shù)資料
型號(hào): SUB45N03-13L
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 30-V (D-S), 175C MOSFET
中文描述: N溝道30 V的(副),175葷MOSFET的
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 42K
代理商: SUB45N03-13L
SUB45N03-13L
Vishay Siliconix
www.vishay.com
2
Document Number: 71740
S-05010—Rev. G, 05-Nov-01
MOSFET SPECIFICATIONS (T
J
=25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
30
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
DS
= 250 A
1
3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 30 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 30 V, V
GS
= 0 V, T
J
= 175 C
150
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
45
A
V
GS
= 10 V, I
D
= 45 A
0.009
0.013
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 45 A, T
J
= 125 C
0.013
0.02
V
GS
= 10 V, I
D
= 45 A, T
J
= 175 C
0.02
0.026
V
GS
= 4.5 V, I
D
= 20 A
0.0145
0.02
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 45 A
20
S
Dynamic
b
Input Capacitance
C
iss
2000
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
370
pF
Reversen Transfer Capacitance
C
rss
180
Total Gate Charge
c
Q
g
40
70
Gate-Source Charge
c
Q
gs
V
= 15 V,
V
= 10 V, I
= 45 A
DS
GS
7.5
nC
Gate-Drain Charge
c
Q
gd
D
8
Turn-On Delay Time
c
t
d(on)
11
20
Rise Time
c
t
r
V
DD
= 15 V, R
L
= 0.33
45 A, V
GEN
= 10 V, R
= 2.5
9
20
ns
Turn-Off Delay Time
c
t
d(off)
I
D
38
70
Fall Time
c
t
f
G
11
20
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
s
45
A
Pulsed Current
I
SM
100
Forward Voltage
a
V
SD
I
F
= 45 A, V
GS
= 0 V
1
1.3
V
Reverse Recovery Time
t
rr
35
70
ns
Peak Reverse Recovery Current
I
RM(REC)
I
= 45 A, di/dt = 100 A/ s
F
1.7
A
Reverse Recovery Charge
Q
rr
0.03
C
Notes:
a.
e.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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