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參數(shù)資料
| 型號(hào)： | SUM45N25-58 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 250-V (D-S), 175 Degrees Celcious, MOSFET |
| 中文描述： | N溝道250 -五（副），175度，Celcious，場(chǎng)效應(yīng)管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 44K |
| 代理商： | SUM45N25-58 |
SUM45N25-58
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72314
S-31515—Rev. A, 14-Jul-03
SPECIFICATIONS (T
J
=25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
250
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2
4
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
30 V
250
nA
V
DS
= 200 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 200 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 200 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
70
A
V
GS
= 10 V, I
D
= 20 A
0.047
0.058
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 C
0.121
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 C
0.163
V
GS
= 6 V, I
D
= 15 A,
0.049
0.062
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
70
S
Dynamic
b
Input Capacitance
C
iss
5000
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
300
pF
Reverse Transfer Capacitance
C
rss
170
Total Gate Charge
c
Q
g
95
140
Gate-Source Charge
c
Q
gs
V
= 125 V,
V
= 10 V, I
= 45 A
DS
GS
28
nC
Gate-Drain Charge
c
Q
gd
D
34
Gate Resistance
R
g
f = 1 MHz
1.6
Turn-On Delay Time
c
t
d(on)
22
35
Rise Time
c
t
r
V
= 100 V, R
= 2.78
45 A, V
GEN
= 10 V, R
G
= 2.5
220
330
ns
Turn-Off Delay Time
c
t
d(off)
I
D
40
60
Fall Time
c
t
f
145
220
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
S
45
A
Pulsed Current
I
SM
70
Forward Voltage
a
V
SD
I
F
= 45 A, V
GS
= 0 V
1.0
1.5
V
Reverse Recovery Time
t
rr
150
225
ns
Peak Reverse Recovery Current
I
RM(REC)
I
= 45 A, di/dt = 100 A/ s
F
12
18
A
Reverse Recovery Charge
Q
rr
0.9
2
C
Notes
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SUM45N25-58_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 250-V (D-S) 175 °C MOSFET |
| SUM45N25-58-E3 | 功能描述:MOSFET 250V 45A 375W 58mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM45N25-58-E3 | 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET 250V 45A TO-263 |
| SUM47N10-24L | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 100-V (D-S) 175 Degree Celcious MOSFET |
| SUM47N10-24L-E3 | 功能描述:MOSFET 100V 47A 136W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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