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參數(shù)資料
| 型號(hào)： | SV1016M |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Rectifier Diode |
| 中文描述： | 180 A, 1600 V, SILICON, RECTIFIER DIODE, DO-8 |
| 封裝： | DO-8, 1 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 135K |
| 代理商： | SV1016M |
SV10
2/7
SURGE RATINGS
Conditions
10ms half sine; T
case
= 175
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
=175
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
A
2
s
2.2
kA
14.9 x 10
3
A
2
s
1.76
kA
24.0 x 10
3
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max.
Units
o
C/W
-
0.08
Thermal resistance - case to heatsink
R
th(c-h)
Thermal resistance - junction to case
R
th(j-c)
Symbol
Parameter
-
0.23
o
C/W
175
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
-55
200
o
C
-
-
175
o
C
Mounting torque 15.0Nm
with mounting compound
On-state (conducting)
Reverse (blocking)
dc
Mounting Torque
-
12.0
15.0
Nm
CHARACTERISTICS
Forward voltage
Peak reverse current
Parameter
μ
C
-
Q
S
Total stored charge
Symbol
V
FM
I
RRM
I
RM
Peak recovery current
100*
-
A
300*
At V
RRM
, T
case
= 175
o
C
-
20
mA
-
1.5
V
At 300A peak, T
case
= 25
o
C
Conditions
Typ.
Max.
Units
At T
vj
= 175C
-
V
TO
Threshold voltage
r
T
Slope resistance
1.3
m
At T
vj
= 175C
-
1.1
V
t
rr
reverse recovery time
6.5*
-
μ
s
I
F
= 100A, dI
RR
/dt = 20A/
μ
s, T
case
= 25C
*Typical values.
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