參數(shù)資料
型號(hào): SV1516FKR
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 整流器
英文描述: 205 A, 1600 V, SILICON, RECTIFIER DIODE, DO-8
封裝: DO-8, 1 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 92K
代理商: SV1516FKR
2/6
www.dynexsemi.com
SV15..F
SURGE RATINGS
Conditions
Max.
Units
3.0
kA
45 x 103
A
2s
I
2t for fusing
I
2t
Surge (non-repetitive) forward current
I
FSM
Parameter
Symbol
10ms half sine; with 0% V
RRM, Tj = 150
oC
THERMAL AND MECHANICAL DATA
dc
Conditions
Max.
Units
oC/W
-0.02
Thermal resistance - case to heatsink
R
th(c-h)
Thermal resistance - junction to case
R
th(j-c)
Mounting torque 15Nm
with mounting compound
Symbol
Parameter
-0.23
oC/W
Min.
t
rr
20
Symbol
Typ.
Units
Parameter
V
FM
Forward voltage
I
RRM
Peak reverse current
Reverse recovery time
Q
RA1
Recovered charge (50% chord)
I
RM
Reverse recovery current
V
TO
Threshold voltage
r
T
Slope resistance
V
FRM
Forward recovery voltage
di/dt = 1000A/
s, T
j = 125
oC-
-
V
At T
vj = 150
oC
-
1.33
m
At T
vj = 150
oC-
1.0
V
-21
A
-35
C
-3.2
s
At V
RRM, Tcase = 150
oC-
mA
At 450A peak, T
case = 25
oC-
1.6
V
Conditions
Max.
I
F = 450A, diRR/dt = 10A/s
T
case = 125
oC, V
R = 100V
CHARACTERISTICS
T
stg
Storage temperature range
-55
200
oC
Nm
15.0
12.0
Mounting torque
-
T
vj
Virtual junction temperature
On-state (conducting)
-
150
oC
CURRENT RATINGS
Symbol
Parameter
Conditions
Units
Max.
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
Half wave resistive load, T
case = 65
oC
205
A
T
case = 65
oC
236
A
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