參數(shù)資料
型號： SVC6310
英文描述： GaAs Foundry Services PROCESS HI2
中文描述： 砷化鎵晶圓代工服務(wù)過程HI2
文件頁數(shù)： 1/3頁
文件大小： 195K
代理商： SVC6310
Performance Summary
Electrical Specifications: T
A
= + 25
o
C
G
V 4
Introduction
M/A-COM’s HI2 process utilizes ion implanted MESFET technology to achieve a high performing, low cost process
for low noise and medium power applications through 20 GHz. Wafer diameter is 100 mm. The focus is on products
for moderate to high volume applications. M/A-COM offers a full compliment of foundry services to meet the re-
quirements for custom designing a MMIC-based die or packaged product.
Applications
Low noise amplifiers, gain stages up to 20 GHz
Floating FET mixers
Transceivers
Driver amplifiers
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice. M/A-COM makes no warranty,
representation or guarantee regarding the suitability of its products for any
particular purpose, nor does M/A-COM assume any liability whatsoever arising out
of the use or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Parameter
Test Conditions
Units
Min.
Typ.
Max.
200 μm PCM FET
I
DSS
V
DS
= 3V, V
GS
= 0V
mA/mm
140
185
235
DC GM
V
DS
= 3V, I
DS
= 50% I
DSS
mS/mm
150
190
220
Vp
V
DS
= 3V, I
DS
= 2.5% I
DSS
V
-0.9
-1.1
-1.4
BVgd
I
G
= 0.1 mA/mm
V
-6
-10
-
Sheet Resistances
NDRS (N- GaAs)
l = 20 mA
Ohm/sq
470
540
590
NCRS (NiCr)
l = 10 mA
Ohm/sq
40
50
60
MIM Capacitors
Capacitance/unit area
f = 1MHz
pF/mm
2
360
400
440
Capacitor Leakage
V = 10 V
μA
-
-
0.5
Param.
Test Conditions
Freq.
Typ. Val.
MAG
V
DS
= 3V, I
DS
= 50% I
DSS
12 GHz / 18 GHz
13 dB / 11.5 dB
Fmin
V
DS
= 3V, I
DS
= 25% I
DSS
12 GHz / 18 GHz
1.3 dB / 1.9 dB
Ga
Associated Gain at Fmin
12 GHz / 18 GHz
7.5 dB / 6.0 dB
Ft
V
DS
= 3V, I
DS
= 50% I
DSS
V
DS
= 5V, I
DS
= 25% I
DSS
, T
ch
= 125
o
C
------
30 GHz
MTTF
------
2 X 10
6
hours
GaAs MESFET Foundry Service
HI2 0.5μm MESFET Process
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